Baskaran, Ganapathy (2008) Impurity band mott insulators: a new route to high Tc superconductivity Science and Technology of Advanced Materials, 9 (4). 044104. ISSN 1468-6996
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Official URL: http://iopscience.iop.org/1468-6996/9/4/044104
Related URL: http://dx.doi.org/10.1088/1468-6996/9/4/044104
Abstract
Last century witnessed the birth of semiconductor electronics and nanotechnology. The physics behind these revolutionary developments is certain quantum mechanical behaviour of 'impurity state electrons' in crystalline 'band insulators', such as Si, Ge, GaAs and GaN, arising from intentionally added (doped) impurities. The present article proposes that certain collective quantum behaviour of these impurity state electrons, arising from Coulomb repulsions, could lead to superconductivity in a parent band insulator, in a way not suspected before. Impurity band resonating valence bond theory of superconductivity in boron doped diamond, recently proposed by us, suggests possibility of superconductivity emerging from impurity band Mott insulators. We use certain key ideas and insights from the field of high-temperature superconductivity in cuprates and organics. Our suggestion also offers new possibilities in the field of semiconductor electronics and nanotechnology. The current level of sophistication in solid state technology and combinatorial materials science is very well capable of realizing our proposal and discover new superconductors.
Item Type: | Article |
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Source: | Copyright of this article belongs to National Institute of Materials Science. |
Keywords: | Superconductivity, Mott Insulators, Resonating Valence Bond, Cuprates, Diamond |
ID Code: | 1897 |
Deposited On: | 08 Oct 2010 11:39 |
Last Modified: | 16 May 2016 12:57 |
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