Fowler, B. ; Lian, S. ; Krishnan, S. ; Jung, L. ; Li, C. ; Samara, D. ; Manna, I. ; Banerjee, S. (1992) ArF excimer laser-enhanced photochemical vapor deposition of epitaxial Si from Si2H6: a simple growth kinetic model Journal of Electronic Materials, 21 (8). pp. 791-797. ISSN 0361-5235
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Official URL: http://www.springerlink.com/content/e3320hg72w6634...
Related URL: http://dx.doi.org/10.1007/BF02665517
Abstract
Photolysis of Si2H6 using 193 nm radiation from an ArF excimer laser has been used to deposit homoepitaxial Si films in the temperature range of 250 to 350°C. Photolytic decomposition of Si2H6 generates growth precursors which adsorb on to a hydrogenated Si surface. A growth kinetic model is proposed based on single-photon 193 nm absorption by Si2H6, and chemical reaction of the photofragments as they diffuse to the sub-strate surface. With the laser beam positioned parallel to the Si substrate, the deposi-tion yield of solid Si from photo-excited Si2H6 is estimated to be 0.20 ± 0.04. Growth rates vary linearly with laser intensity and Si2H6 partial pressure over a range of 1-15 mJ/cm2. pulse and 5-40 mTorr, respectively, and epitaxial films are deposited when laser intensity and Si2H6 partial pressure conditions are such that the initial photofragment concentration is less than ~1013 cm-3.
Item Type: | Article |
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Source: | Copyright of this article belongs to Minerals Metals & Materials Society. |
Keywords: | Si; Photo-CVD; Growth Kinetic Model |
ID Code: | 18911 |
Deposited On: | 17 Nov 2010 13:23 |
Last Modified: | 17 May 2016 03:33 |
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