Jha, G. C. ; Ray, S. K. ; Manna, I. (2008) Effect of deposition temperature on the microstructure and electrical properties of Ba0.8Sr0.2TiO3 thin films deposited by radio-frequency magnetron sputtering Thin Solid Films, 516 (10). pp. 3416-3421. ISSN 0040-6090
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/S00406...
Related URL: http://dx.doi.org/10.1016/j.tsf.2007.11.122
Abstract
Ba0.8Sr0.2TiO3 (BST) nanocrystalline thin films were deposited on n-type silicon substrates by radio-frequency magnetron sputtering technique at various deposition temperatures. X-ray diffraction confirmed that the deposited BST films were polycrystalline possibly due to recrystallization. Scanning electron microscopy study showed the evidence of resputtering in the films deposited at a high substrate temperature (600 °C). The electrical properties of the films were measured using an aluminum/BST/silicon metal-insulator-semiconductor capacitor configuration. Annealing seemed to enhance the dielectric constant of the as-deposited film. The film deposited at 300 °C showed the highest dielectric constant. Three-dimensional Monte-Carlo simulation confirmed that 300-350 °C would be the optimum deposition temperature range for the sputtering of BST films.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| Keywords: | Radio Frequency Magnetron Sputtering; BST; Monte-carlo Simulation |
| ID Code: | 18868 |
| Deposited On: | 17 Nov 2010 12:22 |
| Last Modified: | 06 Jun 2011 05:59 |
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