Halder, S. ; Victor, P. ; Laha, A. ; Bhattacharya, S. ; Krupanidhi, S. B. ; Agarwal, G. ; Singh, A. K. (2002) Pulsed excimer laser ablation growth and characterization of Ba(Sn0.1Ti0.9)O3 thin films Solid State Communications, 121 (6-7). pp. 329-332. ISSN 0038-1098
Full text not available from this repository.
Official URL: http://linkinghub.elsevier.com/retrieve/pii/S00381...
Related URL: http://dx.doi.org/10.1016/S0038-1098(02)00017-0
Abstract
Polycrystalline thin films of Ba(Sn0.1Ti0.9)O3 were deposited on Pt coated silicon substrates by pulsed excimer laser ablation technique. The room temperature dielectric constant of the Ba(Sn0.1Ti0.9)O3 films was 350 at a frequency of 100 kHz. The films showed a slightly diffused phase transition in the range of 275-340 K. The polarization hysteresis behavior confirmed the ferroelectric nature of the thin films. Remanent polarization (Pr) and saturation polarization (Ps) were 1.1 and 3.2 µC/cm2, respectively. The asymmetric capacitance-voltage curve for Ba(Sn0.1Ti0.9)O3 was attributed to the difference in the nature of the electrodes. Dispersion in both the real (ε 'r) and imaginary (ε"r) parts of the dielectric constant at low frequencies with increase in temperature was attributed to space charge contribution in the complex dielectric constant.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| Keywords: | A. Ferroelectrics; B. Laser Ablation Thin Films; D. Phase Transition |
| ID Code: | 18833 |
| Deposited On: | 17 Nov 2010 12:19 |
| Last Modified: | 06 Jun 2011 06:05 |
Repository Staff Only: item control page
