Maffei, N. ; Krupanidhi, S. B. (1992) Excimer laser-ablated bismuth titanate thin films Applied Physics Letters, 60 (6). pp. 781-783. ISSN 0003-6951
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Official URL: http://link.aip.org/link/?APPLAB/60/781/1
Related URL: http://dx.doi.org/10.1063/1.106518
Abstract
Bismuth titanate thin films were deposited by the excimer laser ablation technique. Process parameters such as substrate temperature, laser fluence, and gas pressure were investigated and correlated to the resulting film properties. Results suggest an intrinsic bombardment effect on the growing film. The permittivity and dissipation factor measured at 100 kHz were 150 and 0.01, respectively. The ferroelectric properties exhibited a dependence on film orientation and films with preferred c-axis orientation yielded fully saturated hysteresis loops with Pr=7 µ C/cm2 and Ec=20 kV/cm.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| ID Code: | 18796 |
| Deposited On: | 17 Nov 2010 12:23 |
| Last Modified: | 06 Jun 2011 12:00 |
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