Udayakumar, K. R. ; Chen, J. ; Schuele, P. J. ; Cross, L. E. ; Kumar, V. ; Krupanidhi, S. B. (1992) Polarization reversal and high dielectric permittivity in lead magnesium niobate titanate thin films Applied Physics Letters, 60 (10). pp. 1187-1189. ISSN 0003-6951
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Official URL: http://apl.aip.org/resource/1/applab/v60/i10/p1187...
Related URL: http://dx.doi.org/10.1063/1.107400
Abstract
Ferroelectric thin films of the morphotropic phase boundary composition in the lead magnesium niobate-lead titanate solid solution system were fabricated through the sol-gel spin-on technique. The rapid thermally annealed films showed a very high dielectric constant of 2900, with a concomitant low dissipation factor of 0.02; the films were hysteretic with a saturation remanence of 11 µ C/cm2 and a coercive voltage of 0.5 V. The storage charge density observed at 5 V was 210 fC/µ m2. These films merit consideration for potential application in ferroelectric nonvolatile random access memories (NVRAMs), and in high bit density metal-oxide-semiconductor (MOS) dynamic random access memories (DRAMs).
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| ID Code: | 18788 |
| Deposited On: | 17 Nov 2010 12:24 |
| Last Modified: | 06 Jun 2011 11:33 |
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