Growth and study of antiferroelectric lead zirconate thin films by pulsed laser ablation

Bharadwaja, S. S. N. ; Krupanidhi, S. B. (1999) Growth and study of antiferroelectric lead zirconate thin films by pulsed laser ablation Journal of Applied Physics, 86 (10). pp. 5862-5869. ISSN 0021-8979

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Antiferroelectric lead zirconate (PZ) thin films were deposited by pulsed laser ablation on platinum-coated silicon substrates. Films showed a polycrystalline pervoskite structure upon annealing at 650° C for 5-10 min. Dielectric properties were investigated as a function of temperature and frequency. The dielectric constant of PZ films was 220 at 100 kHz with a dissipation factor of 0.03. The electric field induced transformation from the antiferroelectric phase to the ferroelectric phase was observed through the polarization change, using a Sawyer-Tower circuit. The maximum polarization value obtained was 40 µ C/cm2. The average fields to excite the ferroelectric state, and to reverse to the antiferroelectric state were 71 and 140 kV/cm, respectively. The field induced switching was also observed through double maxima in capacitance-voltage characteristics. Leakage current was studied in terms of current versus time and current versus voltage measurements. A leakage current density of 5× 10-7A/cm2 at 3 V, for a film of 0.7 µ m thickness, was noted at room temperature. The trap mechanism was investigated in detail in lead zirconate thin films based upon a space charge limited conduction mechanism. The films showed a backward switching time of less than 90 ns at room temperature.

Item Type:Article
Source:Copyright of this article belongs to American Institute of Physics.
ID Code:18782
Deposited On:17 Nov 2010 12:24
Last Modified:06 Jun 2011 10:26

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