Roy, D. ; Krupanidhi, S. B. (1992) Pulsed excimer laser ablated barium titanate thin films Applied Physics Letters, 61 (17). pp. 2057-2059. ISSN 0003-6951
Full text not available from this repository.
Official URL: http://apl.aip.org/resource/1/applab/v61/i17/p2057...
Related URL: http://dx.doi.org/10.1063/1.108305
Abstract
Thin films of BaTiO3 were deposited on platinum coated silicon substrates by excimer laser (248 nm) ablation at 600° C or ex situ crystallized at about the same annealing temperature. Films deposited at 600° C showed good crystallinity and were characterized for ferroelectricity, dielectric constant, dielectric loss, leakage current, and C-V characteristics. The films showed a dielectric constant of 220, a dissipation factor of 0.02, a leakage current of 1.8× 10-6 A/cm2 at a bias of 5 V, and a charge storage density of about 40 fC/µ m2 at a field of 0.15 MV/cm.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| ID Code: | 18761 |
| Deposited On: | 17 Nov 2010 12:27 |
| Last Modified: | 06 Jun 2011 11:34 |
Repository Staff Only: item control page
