Yamakawa, K. ; Trolier-McKinstry, S. ; Dougherty, J. P. ; Krupanidhi, S. B. (1995) Reactive magnetron co-sputtered antiferroelectric lead zirconate thin films Applied Physics Letters, 67 (14). pp. 2014-2016. ISSN 0003-6951
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Official URL: http://apl.aip.org/resource/1/applab/v67/i14/p2014...
Related URL: http://dx.doi.org/10.1063/1.114771
Abstract
Antiferroelectric lead zirconate thin films were formed on platinum coated silicon substrates by a reactive magnetron co-sputtering method. The films showed (240) preferred orientation. The crystallization temperatures and the preferred orientation were affected by the lead content in the films. The electric field forced transformation from the antiferroelectric phase to the ferroelectric phase was observed at room temperature with a maximum polarization value of 36 µC/cm2. The average field to excite the ferroelectric state and that for the reversion to the antiferroelectric state were 267 and 104 kV/cm respectively.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| ID Code: | 18759 |
| Deposited On: | 17 Nov 2010 12:27 |
| Last Modified: | 06 Jun 2011 10:44 |
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