Ray, Swati ; Das, Rajesh ; Barua, A. K. (2002) Performance of double junction a-Si solar cells by using ZnO: Al films with different electrical and optical properties at the n/metal interface Solar Energy Materials and Solar Cells, 74 (1-4). pp. 387-392. ISSN 0927-0248
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/S09270...
Related URL: http://dx.doi.org/10.1016/S0927-0248(02)00128-9
Abstract
High-quality ZnO:Al films have been prepared by using RF-magnetron-sputtering method with resistivity ranging from 10-1 to 10-4Ω cm and transmittance above 90% in visible region. We have fabricated small area (1 cm2) double junction (a-Si/a-Si) solar cells using ZnO/Al and ZnO/Ag as back contact. The conversion efficiency of double junction a-Si solar cell increases from 9.9% to 10.9% by using ZnO/Al back contact and to 11.4% by using ZnO/Ag as back contact. Effect of variation of thickness of i-layer on performance of the cell has also been studied.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| Keywords: | ZnO:Al Films; a-Si Solar Cells |
| ID Code: | 1621 |
| Deposited On: | 05 Oct 2010 12:11 |
| Last Modified: | 13 May 2011 09:24 |
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