Bose, Subhasis ; Barua, A. K. (1999) The role of ZnO:Al films in the performance of amorphous-silicon based tandem solar cells Journal of Physics D: Applied Physics, 32 (3). p. 213. ISSN 0022-3727
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Official URL: http://iopscience.iop.org/0022-3727/32/3/006
Related URL: http://dx.doi.org/10.1088/0022-3727/32/3/006
Abstract
Degradation of textured SnO2:F films in glow-discharge hydrogen plasmas has been minimized by deposition ZnO:Al films onto them. This coating also prevents the diffusion of Sn atoms from SnO2:F into the stacked silicon layers of solar cells, while the transmittance and sheet resistivity remain unaltered. Another important aspect is the rear reflection at the back contact. Use of a ZnO2:Al layer as a back reflector at the n+/metal interface in a-Si:H tandem solar cells has been found to absorb light of the long-wavelength (λ>600 nm) region in the solar spectrum. This improves the short-circuit current density and thereby the efficiency of amorphous silicon solar cells to a great extent.
Item Type: | Article |
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Source: | Copyright of this article belongs to Institute of Physics Publishing. |
ID Code: | 1620 |
Deposited On: | 05 Oct 2010 12:11 |
Last Modified: | 13 May 2011 09:36 |
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