Bilayer SnO₂:In/SnO₂ thin films as transparent electrodes of amorphous silicon solar cells

Abstract

Bilayer films of SnO₂:In/SnO₂ were deposited, and the deposition parameters of these films were optimized to obtain good electrical and optical properties for application as the transparent electrode of amorphous silicon solar cells. A depth-profiling technique using secondary ion mass spectrometry was used to study the diffusion of elements. The SnO₂ layer thickness was varied to check the diffusion of indium into the p and i layers, which affects the electrical properties of the amorphous layers of the solar cell. Optimization of SnO₂ layer thickness allows us to raise the p-layer deposition temperature to 180ο C without enhancing indium diffusion into the p-i interface.