Dea, S. C. ; Ray, Swati ; Barua, A. K. (1988) Changes in the properties of glow-discharge-deposited microcrystalline silicon films with thickness Thin Solid Films, 167 (1-2). pp. 121-128. ISSN 0040-6090
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/004060...
Related URL: http://dx.doi.org/10.1016/0040-6090(88)90488-9
Abstract
Variations in the structural, electronic and optical properties of microcrystalline silicon films prepared by glow discharge have been investigated. Structural changes have been studied by scanning and transmission electron microscopy. The hydrogen content and its bonding configuration with silicon at various thicknesses have been studied by IR vibrational spectroscopy and have been found to vary with the thickness. Increases in the dark conductivity and the photoconductivity with increasing film thickness have also been observed.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 1538 |
| Deposited On: | 05 Oct 2010 12:20 |
| Last Modified: | 13 May 2011 09:56 |
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