Low band gap amorphous silicon deposited under He dilution in the γ regime of an rf glow discharge: properties and stability

Abstract

A new type of hydrogenated amorphous silicon film having variable bandgap (1.7-1.5 eV) has been developed in an rf powered plasma enhanced chemical vapor deposition system using a mixture of silane and helium at a subtrate temperature of 210°C. The deposition conditions were chosen so that the rf glow discharge occurs in the γ regime, usually avoided because of powder formation. The influence of the chamber pressure, on the optical gap, the hydrogen content and the electronic properties is presented. Increasing the pressure up to 1.8 Torr is found to decrease the optical gap down to 1.5 eV. The densities of states of these films were measured by electron spin resonance, constant and modulated photocurrent techniques. The density of states above the Fermi level is found to be two orders of magnitude less than that of standard amorphous silicon. Moreover, unusually fast kinetics of degradation are observed. This new material could be a good alternative to amorphous silicon germanium alloys.