Ganguly, Gautam ; De, S. C. ; Ray, Swati ; Barua, A. K. (1989) PECVD of microcrystalline silicon carbon alloy thin films Journal of Non-Crystalline Solids, 114 (2). pp. 822-824. ISSN 0022-3093
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/002230...
Related URL: http://dx.doi.org/10.1016/0022-3093(89)90732-1
Abstract
Microcrystalline silicon carbide films have been prepared by plasma enhanced chemical vapour deposition of fluorinated source gases diluted with hydrogen. The conductivity, activation energy, Hall mobility, optical transmission and reflection, infra red absorption and transmission electron microscopy have been used to characterize these films. The effect of the deposition parameters especially the hydrogen dilution and power density are reported here. The material properties have been correlated with the concentrations and reactions of fluorine and hydrogen atoms during film growth.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 1516 |
| Deposited On: | 05 Oct 2010 12:21 |
| Last Modified: | 13 May 2011 09:55 |
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