Study of doping-dependent shift in the chemical potential of high Tc cuprates by t-t'-J model

Ajay, ; Lal, R. ; Joshi, S. K. (1999) Study of doping-dependent shift in the chemical potential of high Tc cuprates by t-t'-J model Physica C: Superconductivity, 325 (3-4). pp. 201-209. ISSN 0921-4534

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Official URL: http://dx.doi.org/10.1016/S0921-4534(99)00459-1

Related URL: http://dx.doi.org/10.1016/S0921-4534(99)00459-1

Abstract

A t-t'-J model has been employed to study the variation of the chemical potential shift with the change in the density of doped holes in high-Tc cuprates. The model Hamiltonian incorporates the nearest neighbour hopping, the next nearest-neighbour hopping and a fictitious Coulomb interaction (U'). The fictitious Coulomb interaction is treated within the Hubbard self-energy approximation and U'→∞ limit is taken to avoid double occupancy. The Hamiltonian also includes the antiferromagnetic (AFM) exchange energy (J). This term is treated within the mean-field approximation. The density of states (DOS) is calculated and it depends upon t, t, J and hole density nH. It is found that the t-t'-J model is successful in explaining the doping dependent DOS and the shift of the chemical potential with nH only in the overdoped regime of the La2-xSrxCuO4 system. For low and moderate dopings the agreement is not good. Reasons for the failure of the model for low doping regime are mentioned.

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
Keywords:High-Tc Cuprates; Spectral Properties; Doping Density
ID Code:14671
Deposited On:12 Nov 2010 13:51
Last Modified:03 Jun 2011 10:59

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