Lamba, Subhalakshmi ; Joshi, S. K. (2003) Temperature dependent photoluminescence in self assembled InAs quantum dot arrays Physica Status Solidi (B), 239 (2). pp. 353-360. ISSN 0370-1972
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Official URL: http://onlinelibrary.wiley.com/doi/10.1002/pssb.20...
Related URL: http://dx.doi.org/10.1002/pssb.200301807
Abstract
In this paper we investigate the competing effects of thermally assisted hopping and radiative recombination of disorder induced spatially localized excitons on the temperature dependent PL spectrum of a self assembled InAs quantum dot array on GaAs. The stationary photoluminescence spectrum due to the lowest exciton state is calculated from a Monte Carlo simulation. We have also included the effect of the narrowing of the band gap with the increase of temperature. Our results on variation of the peak position and linewidth of the PL spectrum with temperature are in agreement with existing experimental results on InAs/GaAs dot arrays.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to John Wiley and Sons, Inc. |
| ID Code: | 14543 |
| Deposited On: | 12 Nov 2010 14:05 |
| Last Modified: | 03 Jun 2011 10:17 |
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