Phonons in disordered Si-Ge alloys

Srivastava, Vipin ; Joshi, S. K. (1973) Phonons in disordered Si-Ge alloys Physical Review B, 8 (10). pp. 4671-4677. ISSN 0163-1829

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Official URL: http://prb.aps.org/abstract/PRB/v8/i10/p4671_1

Related URL: http://dx.doi.org/10.1103/PhysRevB.8.4671

Abstract

The coherent-potential approximation for phonons in disordered binary alloys has been used to interpret the observed Raman spectra of the substitutionally disordered Si-Ge alloys. The spectral density function is calculated for the q→=0 optical phonons.

Item Type:Article
Source:Copyright of this article belongs to The American Physical Society.
ID Code:14459
Deposited On:12 Nov 2010 14:15
Last Modified:03 Jun 2011 11:43

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