Nag, Angshuman ; Shireen, Ajmala (2010) Search for new transparent conductors: Effect of Ge doping on the conductivity of , and Solid State Communications, 150 (35-36). pp. 1679-1682. ISSN 0038-1098
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Official URL: https://doi.org/10.1016/j.ssc.2010.06.025
Related URL: http://dx.doi.org/10.1016/j.ssc.2010.06.025
Abstract
Only a small amount (≤3.5 mol%) of Ge can be doped in Ga2O3, Ga1.4In0.6O3 and In2O3 by means of solid state reactions at 1400 °C. All these samples are optically transparent in the visible range, but Ge-doped Ga3O3 and Ga1.4In0.6O3 are insulating. Only Ge-doped In2O3 exhibits a significant decrease in resistivity, the resistivity decreasing further on thermal quenching and H2 reduction. The resistivity of 2.7% Ge-doped In2O3 after H2 reduction shows a metallic behavior, and a resistivity of ∼1 mΩ cm at room temperature, comparable to that of Sn-doped In2O3.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| Keywords: | A. Ge-doped In2O3; A. Ge-doped Ga2O3; A. Transparent conducting oxidesD. Electrical conductivity. |
| ID Code: | 142194 |
| Deposited On: | 05 Jan 2026 07:45 |
| Last Modified: | 05 Jan 2026 07:45 |
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