Vengurlekar, A. S. ; Jha, Sudhanshu S. (1987) Transient electrical conductivity of nonequilibrium carriers excited by subpicosecond optical pulses in GaAs Applied Physics Letters, 51 (5). pp. 323-325. ISSN 0003-6951
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Official URL: http://link.aip.org/link/?APPLAB/51/323/1
Related URL: http://dx.doi.org/10.1063/1.98990
Abstract
We calculate the time-dependent electrical conductivity σ(t) for the nonequilibrium carriers excited by a subpicosecond laser pulse in a polar semiconductor like GaAs. The photoexcited carriers are assumed to relax towards equilibrium by emitting longitudinal optical (LO) phonons in a cascade via the strong Frohlich interaction. We show that σ(t), obtained in the picosecond time domain, has a highly nonlinear time evolution. It develops a pronounced dip, with its value becoming negative, whenever the generated low density carrier distribution is sharply peaked initially at energy ε mhωLO, m=integer, hωLO being the long wavelength LO phonon energy.
Item Type: | Article |
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Source: | Copyright of this article belongs to American Institute of Physics. |
Keywords: | Gallium Arsenides; Charge Carriers; Electric Conductivity; Carrier Density; Optical Phonons |
ID Code: | 14031 |
Deposited On: | 12 Nov 2010 09:19 |
Last Modified: | 02 Jun 2011 15:55 |
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