Electrical transport properties of half-heusler ScPdBi single crystals under extreme conditions

Abstract

We synthesize single-crystals of ScPdBi, a Half-Heusler compound by self-flux growth technique and report its physical properties such as magneto-transport and down to 2 K. Resistivity measurements were performed on these single-crystals at ambient and high-pressure conditions. Temperature-dependent resistivity measurements reveal that ScPdBi shows the metallic character at ambient pressure and without applied . The metallic character of ScPdBi was un-altered even in extreme conditions such as high pressure (up to 19 GPa) and (up to 9 T). We observe an upturn in the resistivity which persists even at high pressure. We rule-out the presence of the by performing the measurements down to 2 K which resulted in a low Sommerfeld coefficient (γ ≈2.6±0.9 mJ mol^-1 K^-2). This anomaly in resistivity below 30 K could be attributed to an electron-hole scattering process or a carrier imbalance effect.