Reactive pulsed laser deposition of titanium nitride thin film: optimization of process parameters using secondary ion mass spectrometry

Krishnan, R. ; Mathews, Tom ; Balamurugan, A. K. ; Dash, S. ; Tyagi, A. K. ; Baldev Raj, ; Jayaram, Vikram (2010) Reactive pulsed laser deposition of titanium nitride thin film: optimization of process parameters using secondary ion mass spectrometry Applied Surface Science, 256 (10). pp. 3077-3080. ISSN 0169-4332

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Official URL: http://linkinghub.elsevier.com/retrieve/pii/S01694...

Related URL: http://dx.doi.org/10.1016/j.apsusc.2009.11.076

Abstract

Reactive Pulsed Laser Deposition is a single step process wherein the ablated elemental metal reacts with a low pressure ambient gas to form a compound. We report here a Secondary Ion Mass Spectrometry based analytical methodology to conduct minimum number of experiments to arrive at optimal process parameters to obtain high quality TiN thin film. Quality of these films was confirmed by electron microscopic analysis. This methodology can be extended for optimization of other process parameters and materials.

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
Keywords:TiN; SIMS; Thin Films; Reactive Pulsed Laser Deposition; Multilayer
ID Code:13702
Deposited On:12 Nov 2010 15:05
Last Modified:13 May 2011 09:08

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