Jayaraman, A. ; Narayanamurti, V. ; Kasper, H. M. ; Chin, M. A. ; Maines, R. G. (1976) Pressure dependence of the energy gap in some I-III-VI2 compound semiconductors Physical Review B, 14 (8). pp. 3516-3519. ISSN 0163-1829
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Official URL: http://prb.aps.org/abstract/PRB/v14/i8/p3516_1
Related URL: http://dx.doi.org/10.1103/PhysRevB.14.3516
Abstract
The shifts in the absorption edge with hydrostatic pressure have been measured for four ternary semiconductors. In all cases the energy gap increases with pressure. From the data the pressure dependence of the energy gap (dEg/dP) was determined as 2.2 meV/kbar for AgGaS2, 3.4 meV/kbar for CuGaS2, 5.3 meV/kbar for AgGaSe2, and 2.7 meV/kbar for AgInSe2. These shifts are compared with the corresponding II-VI compounds and discussed. Some optical effects associated with the pressure-induced phase transitions in some of the I-III-VI2 compounds and II-VI compounds are described and discussed.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Physical Society. |
| ID Code: | 13336 |
| Deposited On: | 11 Nov 2010 08:05 |
| Last Modified: | 11 Jun 2011 08:31 |
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