Guin, Satya N. ; Biswas, Kanishka (2015) Temperature driven p–n–p type conduction switching materials: current trends and future directions Physical Chemistry Chemical Physics, 17 (16). pp. 10316-10325. ISSN 1463-9076
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Official URL: http://doi.org/10.1039/C4CP06088A
Related URL: http://dx.doi.org/10.1039/C4CP06088A
Abstract
Modern technological inventions have been going through a “renaissance” period. Development of new materials and understanding of fundamental structure–property correlations are the important steps to move further for advanced technologies. In modern technologies, inorganic semiconductors are the leading materials which are extensively used for different applications. In the current perspective, we present discussion on an important class of materials that show fascinating p–n–p type conduction switching, which can have potential applications in diodes or transistor devices that operate reversibly upon temperature or voltage change. We highlight the key concepts, present the current fundamental understanding and show the latest developments in the field of p–n–p type conduction switching. Finally, we point out the major challenges and opportunities in this field.
Item Type: | Article |
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Source: | Copyright of this article belongs to Royal Society of Chemistry |
ID Code: | 128238 |
Deposited On: | 03 Nov 2022 05:52 |
Last Modified: | 03 Nov 2022 05:52 |
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