Guin, Satya N. ; Chatterjee, Arindom ; Biswas, Kanishka (2014) Enhanced thermoelectric performance in p-type AgSbSe2 by Cd-doping RSC Advances, 4 (23). p. 11811. ISSN 2046-2069
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Official URL: http://doi.org/10.1039/C4RA00969J
Related URL: http://dx.doi.org/10.1039/C4RA00969J
Abstract
Thermoelectric materials can directly convert waste heat into electrical energy and will play a significant role in future energy management. Herein, we have achieved improved thermoelectric performance in p-type Te-free AgSb1−xCdxSe2 (x = 0.02–0.06) system. Simple doping of Cd2+ in the Sb3+ sublattice increases the carrier concentration, resulting in enhanced electrical conductivity in AgSb1−xCdxSe2 compared to the pristine AgSbSe2. Improved electrical transport and ultra low thermal conductivity give rise to a high thermoelectric figure of merit, ZT, of ∼1 at ∼640 K in AgSb0.98Cd0.02Se2, which is similar to the traditional market based expensive and scarce metal tellurides.
Item Type: | Article |
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Source: | Copyright of this article belongs to Royal Society of Chemistry |
ID Code: | 128137 |
Deposited On: | 03 Nov 2022 05:48 |
Last Modified: | 03 Nov 2022 05:48 |
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