Realization of High Thermoelectric Figure of Merit in Solution Synthesized 2D SnSe Nanoplates via Ge Alloying

Abstract

Recently single crystals of layered SnSe have created a paramount importance in thermoelectrics owing to their ultralow lattice thermal conductivity and high thermoelectric figure of merit (zT). However, nanocrystalline or polycrystalline SnSe offers a wide range of thermoelectric applications for the ease of its synthesis and machinability. Here, we demonstrate high zT of ∼2.1 at 873 K in two-dimensional nanoplates of Ge-doped SnSe synthesized by a simple hydrothermal route followed by spark plasma sintering (SPS). Anisotropic measurements also show a high zT of ∼1.75 at 873 K parallel to the SPS pressing direction. Ge doping (3 mol %) in SnSe nanoplates significantly enhances the p-type carrier concentration, which results in high electrical conductivity and power factor of ∼5.10 μW/cm K2 at 873 K. High lattice anharmonicity, nanoscale grain boundaries, and Ge precipitates in the SnSe matrix synergistically give rise to the ultralow lattice thermal conductivity of ∼0.18 W/mK at 873 K.