Dey, Sunita ; Govindaraj, A. ; Biswas, Kanishka ; Rao, C.N.R. (2014) Luminescence properties of boron and nitrogen doped graphene quantum dots prepared from arc-discharge-generated doped graphene samples Chemical Physics Letters, 595-59 . pp. 203-208. ISSN 00092614
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Official URL: http://doi.org/10.1016/j.cplett.2014.02.012
Related URL: http://dx.doi.org/10.1016/j.cplett.2014.02.012
Abstract
Substitution of heteroatoms in graphene is known to tailor its band gap. Another approach to alter the band gap of graphene is to create zero-dimensional graphene quantum dots (GQDs). Here we present the synthesis and photoluminescence properties of B-doped graphene quantum dots (B-GQDs) for the first time, having prepared the B-GQDs by chemical scissoring of B-doped graphene generated by arc-discharge in gas phase. We compare the photoluminescence properties of B-GQDs with nitrogen-doped GQDs and pristine GQDs. Besides, excitation wavelength independent PL emission, excellent upconversion of PL emission is observed in GQDs as well as B- and N-doped GQDs.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier B.V. |
| ID Code: | 128070 |
| Deposited On: | 03 Nov 2022 05:42 |
| Last Modified: | 03 Nov 2022 05:42 |
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