Biswas, Kanishka ; Zhao, Li-Dong ; Kanatzidis, Mercouri G. (2012) Tellurium-Free Thermoelectric: The Anisotropic n-Type Semiconductor Bi2S3 Advanced Energy Materials, 2 (6). pp. 634-638. ISSN 16146832
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Official URL: http://doi.org/10.1002/aenm.201100775
Related URL: http://dx.doi.org/10.1002/aenm.201100775
Abstract
Well-oriented crystals of n-type bulk Bi2S3 and Bi2S3-xSex doped with BiCl3 show excellent anisotropic thermoelectric properties. BiCl3 doping in Bi2S3 leads to significant increase in the electrical conductivity, which results to a promising thermoelectric figure of merit, ZT, of ≈0.6 at 760 K.
Item Type: | Article |
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Source: | Copyright of this article belongs to John Wiley & Sons, Inc. |
ID Code: | 128066 |
Deposited On: | 03 Nov 2022 05:42 |
Last Modified: | 03 Nov 2022 05:42 |
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