Mahapatra, Souvik ; Parihar, Narendra (2020) Modeling of NBTI Using BAT Framework: DC-AC Stress-Recovery Kinetics, Material, and Process Dependence IEEE Transactions on Device and Materials Reliability, 20 (1). pp. 4-23. ISSN 1530-4388
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Official URL: http://doi.org/10.1109/TDMR.2020.2967696
Related URL: http://dx.doi.org/10.1109/TDMR.2020.2967696
Abstract
Threshold voltage shift (ΔVT) due to Negative Bias Temperature Instability (NBTI) in p-MOSFETs is modeled using the BTI Analysis Tool (BAT) framework. The ΔV T time kinetics during and after DC and AC stress at different stress (VGSTR) and recovery (VGREC) biases, temperature (T), pulse duty cycle (PDC) and frequency (f) is modeled. The influences of Nitrogen content (N%) in the gate insulator stack, Germanium content (Ge%) in the channel, and mechanical strain due to dimension scaling and layout are explained. The framework is used to analyze measured data from planar, Fully Depleted Silicon on Insulator (FDSOI) and FinFET devices having Silicon (Si) and Silicon Germanium (SiGe) channels.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Institute of Electrical and Electronic Engineers. |
| ID Code: | 123923 |
| Deposited On: | 25 Oct 2021 07:06 |
| Last Modified: | 25 Oct 2021 07:06 |
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