Modeling of DC - AC NBTI Stress - Recovery Time Kinetics in P-Channel Planar Bulk and FDSOI MOSFETs and FinFETs

Abstract

The physics-based BTI Analysis Tool (BAT) is used to model the time kinetics of threshold voltage shift (ΔV T ) during and after NBTI in p-channel planar bulk and FDSOI MOSFETs and SOI FinFETs. BAT uses uncorrelated contributions from the trap generation at the channel/gate insulator interface (ΔV IT ) and gate insulator bulk (ΔV OT ), and hole trapping in pre-existing gate insulator bulk traps (ΔV HT ). The ΔV IT kinetics is simulated by the Reaction-Diffusion (RD) model. The empirical ΔV HT model used earlier is now substituted by the Activated Barrier Double Well Thermionic (ABDWT) model. The ABDWT model is also used to verify the time constant of the electron capture induced fast ΔV IT recovery. Empirical equations are used for ΔV OT . The enhanced BAT modeling framework is validated using measured data from a wide range of experimental conditions and across different device architectures and gate insulator processes.