Growth stress induced tunability of dielectric permittivity in thin films

Abstract

Stress is inevitable during thin film growth. It is demonstrated here that the growth stress has a significant effect on the dielectric constant of high-k thin films. ZrO₂ thin films were deposited on Ge by reactive direct current sputtering. Stress in these films was measured using in-situ curvature measurement tool. The growth stress was tuned from −2.8 to 0.1 GPa by controlling deposition rate. Dielectric permittivity of ZrO₂ depends on temperature, phase, and stress. The correct combination of parameters—phase, texture, and stress—is shown to yield films with an equivalent oxide thickness of 8 Å. Growth stresses are shown to affect the dielectric constant both directly by affecting lattice parameter and indirectly through the effect on phase stability of ZrO₂.