KUMAR, A ; LAURILA, T ; VUORINEN, V ; PAUL, A (2009) Determination of diffusion parameters and activation energy of diffusion in V3Si phase with A15 crystal structure Scripta Materialia, 60 (6). pp. 377-380. ISSN 1359-6462
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Official URL: http://doi.org/10.1016/j.scriptamat.2008.11.003
Related URL: http://dx.doi.org/10.1016/j.scriptamat.2008.11.003
Abstract
Diffusion parameters, such as the integrated diffusion coefficient of the phase, the tracer diffusion coefficient of species at different temperatures and the activation energy for diffusion, are determined in V3Si phase with A15 crystal structure. The tracer diffusion coefficient of Si was found to be negligible compared to the tracer diffusion coefficient of V. The calculated diffusion parameters will help to validate the theoretical analysis of defect structure of the phase, which plays an important role in the superconductivity.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Acta Materialia Inc. |
| ID Code: | 121342 |
| Deposited On: | 15 Jul 2021 03:49 |
| Last Modified: | 15 Jul 2021 03:49 |
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