Prasad, Soma ; Paul, Aloke (2011) An Overview of the Diffusion Studies in the V-Si System Defect and Diffusion Forum, 312-31 . pp. 731-736. ISSN 1662-9507
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Official URL: http://doi.org/10.4028/www.scientific.net/DDF.312-...
Related URL: http://dx.doi.org/10.4028/www.scientific.net/DDF.312-315.731
Abstract
The diffusion study in the V-Si system is reviewed. We show that the indirect method used previously to determine the diffusion parameters draws unnecessary error. Rather the method developed by Wagner should be used to calculate the diffusion parameters directly from the composition profile.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Scientific.Net. |
| ID Code: | 121288 |
| Deposited On: | 14 Jul 2021 05:18 |
| Last Modified: | 14 Jul 2021 05:18 |
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