Prasad, S. ; Paul, A. (2011) Growth mechanism of phases by interdiffusion and atomic mechanism of diffusion in the molybdenum–silicon system Intermetallics, 19 (8). pp. 1191-1200. ISSN 0966-9795
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Official URL: http://doi.org/10.1016/j.intermet.2011.03.027
Related URL: http://dx.doi.org/10.1016/j.intermet.2011.03.027
Abstract
Tracer diffusion coefficients are calculated in different phases in the Mo–Si system from diffusion couple experiments using the data available on thermodynamic parameters. Following, possible atomic diffusion mechanism of the species is discussed based on the crystal structure. Unusual diffusion behaviour is found in the Mo5Si3 and Mo3Si phases, which indicate the nature of defects present on different sublattices. Further the growth mechanism of the phases is discussed and morphological evolution during interdiffusion is explained.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 121283 |
| Deposited On: | 14 Jul 2021 04:54 |
| Last Modified: | 14 Jul 2021 04:54 |
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