Roy, Soumitra ; Paul, Aloke (2014) Reactive Diffusion in the Re-Si System Journal of Phase Equilibria and Diffusion, 35 (5). pp. 631-635. ISSN 1547-7037
Full text not available from this repository.
Official URL: http://doi.org/10.1007/s11669-014-0334-6
Related URL: http://dx.doi.org/10.1007/s11669-014-0334-6
Abstract
A study on reactive diffusion is conducted in the Re-Si system. According to the study, ReSi1.8 phase grows with much higher thickness than the Re2Si phase, in the interdiffusion zone of bulk diffusion couples. The activation energy for integrated diffusion of ReSi1.8 is estimated to be 605 ± 23 kJ/mol. The growth of the Re2Si phase is studied by considering an incremental diffusion couple of Re/ReSi1.8. Analysis based on the calculation of integrated diffusion coefficients indicates the reason underlying the observed high difference between the growth rates of the ReSi1.8 and Re2Si phases.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Springer-Verlag. |
| ID Code: | 121218 |
| Deposited On: | 13 Jul 2021 05:50 |
| Last Modified: | 13 Jul 2021 05:50 |
Repository Staff Only: item control page
