Santra, Sangeeta ; Paul, Aloke (2016) Effect of Ga content in Cu(Ga) on the growth of V3Ga following bronze technique Intermetallics, 70 . pp. 1-6. ISSN 0966-9795
Full text not available from this repository.
Official URL: http://doi.org/10.1016/j.intermet.2015.11.004
Related URL: http://dx.doi.org/10.1016/j.intermet.2015.11.004
Abstract
Diffusion–controlled growth rate of V3Ga in the Cu(Ga)/V system changes dramatically because of a small change in Ga content in Cu(Ga). One atomic percent increase from 15 to 16 leads to more than double the product phase layer thickness and a decrease in activation energy from 255 to 142 kJ/mol. Kirkendall marker experiment indicates that V3Ga grows because of diffusion of Ga. Role of different factors influencing the diffusion rate of Ga and high growth rate of V3Ga are discussed.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 121206 |
| Deposited On: | 13 Jul 2021 04:40 |
| Last Modified: | 13 Jul 2021 04:40 |
Repository Staff Only: item control page
