Growth of TlBa2Ca2Cu3Oy superconducting thin film on CeO2 buffered sapphire substrate

Abstract

We report the growth of TlBa2Ca2Cu3Oy superconducting thin film on CeO2 buffered r-cut sapphire substrate by amorphous phase epitaxy method, wherein an amorphous phase of a composition, TlBa2Ca3Cu4Oy was deposited by rf magnetron sputtering and subsequently crystallized by annealing at high temperatures in a closed system. There exists an optimum thickness of about 200 Å of CeO2 buffer layer that gives a smooth buffer layer surface. At the temperature around 840 °C we get only Tl-2212 phase and for a longer annealing time it results in Tl-1212 phase. At higher temperatures Ba reacts with Ce to form BaCeO3. To avoid this reaction process we introduced another amorphous buffer layer, TlSr2CaCu2Oy onto CeO2 layer. By this method we could prepare a good quality Tl-1223 thin film which showed a Tc of 104 K and a Jc=0.3 MA/cm2 at 77 K and 0.1 T field.