Roul, Basanta ; Rajpalke, Mohana K. ; Bhat, Thirumaleshwara N. ; Kumar, Mahesh ; Kalghatgi, A. T. ; Krupanidhi, S. B. ; Kumar, Nitesh ; Sundaresan, A. (2011) Experimental evidence of Ga-vacancy induced room temperature ferromagnetic behavior in GaN films Applied Physics Letters, 99 (16). p. 162512. ISSN 0003-6951
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Official URL: http://doi.org/10.1063/1.3654151
Related URL: http://dx.doi.org/10.1063/1.3654151
Abstract
We have grown Ga deficient GaN epitaxial films on (0001) sapphire substrate by plasma-assisted molecular beam epitaxy and report the experimental evidence of room temperature ferromagnetic behavior. The observed yellow emission peak in room temperature photoluminescence spectra and the peak positioning at 300 cm−1 in Raman spectra confirms the existence of Ga vacancies. The x-ray photoelectron spectroscopic measurements further confirmed the formation of Ga vacancies; since the N/Ga is found to be >1. The ferromagnetism is believed to originate from the polarization of the unpaired 2p electrons of N surrounding the Ga vacancy.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| ID Code: | 120052 |
| Deposited On: | 22 Jun 2021 05:34 |
| Last Modified: | 22 Jun 2021 05:34 |
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