Electrical resistance measurements in a diamond anvil cell to 40 GPa on ytterbium

Abstract

An easily assembled setup employing diamond anvil cell, stainless steel gasket and leads, and mylar embedded Al₂O₃ (alumina) pressure medium for the measurement of electrical resistance of materials under pressure is described. The use of a mylar sheet prevents the alumina layer from sticking to the anvil in the precompacting stage of Al₂O₃ and also reduces the pressure gradients in the final assembly. The technique is used to reproduce the known transition in Si, Ge, and Fe. The results of measurements of electrical resistance of ytterbium up to 40 GPa are reported. In the hcp phase of ytterbium the electrical resistance increases with pressure. Efforts are made to explain the variation of resistance with pressure from known band structure calculations.