Facile fabrication of lateral nanowire wrap-gate devices with improved performance

Dhara, Sajal ; Sengupta, Shamashis ; Solanki, Hari S. ; Maurya, Arvind ; Pavan R., Arvind ; Gokhale, M. R. ; Bhattacharya, Arnab ; Deshmukh, Mandar M. (2011) Facile fabrication of lateral nanowire wrap-gate devices with improved performance Applied Physics Letters, 99 (17). p. 173101. ISSN 0003-6951

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Official URL: http://doi.org/10.1063/1.3634010

Related URL: http://dx.doi.org/10.1063/1.3634010

Abstract

We present a simple fabrication technique for lateral nanowire wrap-gate devices with high capacitive coupling and field-effect mobility. Our process uses e-beam lithography with a single resist-spinning step and does not require chemical etching. We measure, in the temperature range 1.5–250 K, a subthreshold slope of 5–54 mV/decade and mobility of 2800–2500 cm2/Vs—significantly larger than previously reported lateral wrap-gate devices. At depletion, the barrier height due to the gated region is proportional to applied wrap-gate voltage.

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