Facile fabrication of lateral nanowire wrap-gate devices with improved performance

Abstract

We present a simple fabrication technique for lateral nanowire wrap-gate devices with high capacitive coupling and field-effect mobility. Our process uses e-beam lithography with a single resist-spinning step and does not require chemical etching. We measure, in the temperature range 1.5–250 K, a subthreshold slope of 5–54 mV/decade and mobility of 2800–2500 cm²/Vs—significantly larger than previously reported lateral wrap-gate devices. At depletion, the barrier height due to the gated region is proportional to applied wrap-gate voltage.