Solanki, Hari S. ; Sengupta, Shamashis ; Dubey, Sudipta ; Singh, Vibhor ; Dhara, Sajal ; Kumar, Anil ; Bhattacharya, Arnab ; Ramakrishnan, S. ; Clerk, Aashish A. ; Deshmukh, Mandar M. (2011) High Q electromechanics with InAs nanowire quantum dots Applied Physics Letters, 99 (21). p. 213104. ISSN 0003-6951
Full text not available from this repository.
Official URL: http://doi.org/10.1063/1.3663631
Related URL: http://dx.doi.org/10.1063/1.3663631
Abstract
In this report, we study electromechanical properties of suspended InAs nanowire resonators. At low temperatures, the nanowire acts as the island of a single electron transistor, and a strong coupling between electron transport and mechanical modes is observed for resonant mechanical driving. Further, as a function of the mechanical drive frequency, the conductance exhibits a Fano lineshape. This arises from the interference between two contributions to potential of the single electron transistor coming from capacitively induced charges and the mechanical oscillation. The quality factor (Q) of these devices is ∼105 at 100 mK.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to AIP Publishing LLC. |
| ID Code: | 117649 |
| Deposited On: | 29 Apr 2021 05:26 |
| Last Modified: | 29 Apr 2021 05:26 |
Repository Staff Only: item control page
