Wide Bandwidth Nanowire Electromechanics on Insulating Substrates at Room Temperature

Abhilash, T. S. ; Mathew, John P. ; Sengupta, Shamashis ; Gokhale, M. R. ; Bhattacharya, Arnab ; Deshmukh, Mandar M. (2012) Wide Bandwidth Nanowire Electromechanics on Insulating Substrates at Room Temperature Nano Letters, 12 (12). pp. 6432-6435. ISSN 1530-6984

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Official URL: http://doi.org/10.1021/nl303804e

Related URL: http://dx.doi.org/10.1021/nl303804e

Abstract

We study InAs nanowire resonators fabricated on sapphire substrate with a local gate configuration. The key advantage of using an insulating sapphire substrate is that it results in a reduced parasitic capacitance, thus allowing both wide bandwidth actuation and detection using a network analyzer as well as signal detection at room temperature. Both in-plane and out-of-plane vibrational modes of the nanowire can be driven and the nonlinear response of the resonators studied. In addition, this technique enables the study of variation of thermal strains due to heating in nanostructures.

Item Type:Article
Source:Copyright of this article belongs to American Chemical Society.
Keywords:Nanowire; NEMS; Sapphire; rf Electromechanics.
ID Code:117645
Deposited On:29 Apr 2021 05:14
Last Modified:29 Apr 2021 05:14

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