Gupta, Priti ; Rahman, A. A. ; Hatui, Nirupam ; Parmar, Jayesh B. ; Chalke, Bhagyashree A. ; Bapat, Rudheer D. ; Purandare, S. C. ; Deshmukh, Mandar M. ; Bhattacharya, Arnab (2013) Free-standing semipolar III-nitride quantum well structures grown on chemical vapor deposited graphene layers Applied Physics Letters, 103 (18). p. 181108. ISSN 0003-6951
Full text not available from this repository.
Official URL: http://doi.org/10.1063/1.4827539
Related URL: http://dx.doi.org/10.1063/1.4827539
Abstract
We report the synthesis and optical characterization of semipolar-oriented III-nitride quantum well (QW) structures obtained by growth on chemical vapor deposited graphene layers using metalorganic vapor phase epitaxy. Various multi-quantum well stacks of GaN(QW)/AlGaN(barrier) and InGaN (QW)/GaN (barrier) were grown. Growth on graphene not only helps achieve a semipolar orientation but also allows facile transfer of the QW multilayer stack to other cheap, flexible substrates. We demonstrate room-temperature photoluminescence from layers transferred to flexible Kapton films.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to AIP Publishing LLC. |
| ID Code: | 117639 |
| Deposited On: | 29 Apr 2021 04:34 |
| Last Modified: | 29 Apr 2021 04:34 |
Repository Staff Only: item control page
