Free-standing semipolar III-nitride quantum well structures grown on chemical vapor deposited graphene layers

Gupta, Priti ; Rahman, A. A. ; Hatui, Nirupam ; Parmar, Jayesh B. ; Chalke, Bhagyashree A. ; Bapat, Rudheer D. ; Purandare, S. C. ; Deshmukh, Mandar M. ; Bhattacharya, Arnab (2013) Free-standing semipolar III-nitride quantum well structures grown on chemical vapor deposited graphene layers Applied Physics Letters, 103 (18). p. 181108. ISSN 0003-6951

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Official URL: http://doi.org/10.1063/1.4827539

Related URL: http://dx.doi.org/10.1063/1.4827539

Abstract

We report the synthesis and optical characterization of semipolar-oriented III-nitride quantum well (QW) structures obtained by growth on chemical vapor deposited graphene layers using metalorganic vapor phase epitaxy. Various multi-quantum well stacks of GaN(QW)/AlGaN(barrier) and InGaN (QW)/GaN (barrier) were grown. Growth on graphene not only helps achieve a semipolar orientation but also allows facile transfer of the QW multilayer stack to other cheap, flexible substrates. We demonstrate room-temperature photoluminescence from layers transferred to flexible Kapton films.

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Deposited On:29 Apr 2021 04:34
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