Garg, Alka B. ; Vijayakumar, V. ; Godwal, B. K. ; Choudhury, A. ; Hochheimer, Hans D. (2007) Reentrant high-conduction state in CuIr2S4 under pressure Solid State Communications, 142 (7). pp. 369-372. ISSN 0038-1098
Full text not available from this repository.
Official URL: http://linkinghub.elsevier.com/retrieve/pii/S00381...
Related URL: http://dx.doi.org/10.1016/j.ssc.2007.03.029
Abstract
The results of electrical resistance and angle dispersive X-ray diffraction measurements at high pressures and ambient temperature on the chalcogenide spinel, CuIr2S4 are reported. The resistance increases gradually and reaches around 12 GPa a value that is approximately forty times the initial value. Above 15 GPa, the resistance decreases up to 30 GPa and on further pressure increase tends to saturate at a value slightly above the ambient pressure value. Thus, the material exhibits a reentrant high conducting phase under pressure. The behaviour of the electrical resistance exhibits a close correlation with the structural evolution with pressure.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| Keywords: | A. Inorganic Compounds; B. X-Ray Diffraction; C. Electric Transport; D. High Pressure |
| ID Code: | 11737 |
| Deposited On: | 13 Nov 2010 13:58 |
| Last Modified: | 02 Jun 2011 08:39 |
Repository Staff Only: item control page
