Garg, Alka B. ; Vijayakumar, V. ; Godwal, B. K. ; Ohtani, T. ; Martin, B. R. ; Hochheimer, H. D. (2004) High pressure X-ray diffraction and electrical resistance study of the quasi-one-dimensional sulfide InV6S8 Solid State Communications, 132 (11). pp. 731-736. ISSN 0038-1098
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/S00381...
Related URL: http://dx.doi.org/10.1016/j.ssc.2004.09.042
Abstract
The ambient structural details and the results of room temperature high pressure angle dispersive X-ray diffraction and electrical resistance measurements on the quasi-one-dimensional sulfide, InV6S8, to a pressure of 25 GPa are reported. The material does not undergo a phase transition in this pressure range, though an anomaly in the c/a ratio has been observed around 10 Gpa. A fit of the Murnaghan equation of state to the V/V0 versus pressure data, with the value of the derivative of B0 with respect to pressure, B'0, fixed at 4 has yielded a value of the bulk modulus, B0, of 110 GPa. We also present data of the pressure dependence of the lattice constants, a and c, the ratio c/a, and the resistance at room temperature.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| Keywords: | A. Inorganic Compounds; C. High Pressure; C. X-Ray Diffraction; D. Electrical Conductivity |
| ID Code: | 11722 |
| Deposited On: | 13 Nov 2010 13:59 |
| Last Modified: | 02 Jun 2011 08:49 |
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