Godwal, B. K. ; Jayaraman, A. ; Meenakshi, S. ; Rao, R. S. ; Sikka, S. K. ; Vijayakumar, V. (1998) Electronic topological and structural transition in AuIn2 under pressure Physical Review B, 57 (2). pp. 773-776. ISSN 0163-1829
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Official URL: http://prb.aps.org/abstract/PRB/v57/i2/p773_1
Related URL: http://dx.doi.org/10.1103/PhysRevB.57.773
Abstract
Electrical resistivity, thermoelectric power, and high-pressure x-ray-diffraction measurements are carried out to investigate the anomaly observed earlier in fusion data around 3 GPa in the intermetallic compound AuIn2. While the imaging plate high-pressure angle-dispersive data indicate a structural phase transition beyond 8 GPa, the thermoelectric power shows a peak around 2 GPa, indicating the occurrence of an electronically driven isostructural transition. The first-principles linearized muffin-tin orbital calculations reveal that this transition is brought about by interception of the Fermi level by the energy-band maximum. The Lifshitz nature of this transition is responsible for the anomaly in the high-pressure electrical and fusion data.
Item Type: | Article |
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Source: | Copyright of this article belongs to American Physical Society. |
ID Code: | 11662 |
Deposited On: | 13 Nov 2010 14:05 |
Last Modified: | 02 Jun 2011 09:35 |
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