Ghosh, Aswini (1989) Temperature-dependent thermoelectric power of semiconducting bismuth-vanadate glass Journal of Applied Physics, 65 (1). pp. 227-230. ISSN 0021-8979
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Official URL: http://jap.aip.org/resource/1/japiau/v65/i1/p227_s...
Related URL: http://dx.doi.org/10.1063/1.342575
Abstract
The temperature dependence of the thermoelectric power of the semiconducting bismuth-vanadate glasses was presented in a range of compositions. The high-temperature thermoelectric power was satisfactorily explained by Heikes'relation [R. R. Heikes and R. W. Ure, Eds., Thermoelectricity (Interscience, New York, 1961), p. 81]. The thermoelectric power data also showed evidence of small polaron formation in the glass and revealed that the disorder energy happened to increase with the increase of V2O5 content in the glass. An estimate of the disorder energy was made from the low-temperature thermoelectric power data.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| ID Code: | 11622 |
| Deposited On: | 13 Nov 2010 14:09 |
| Last Modified: | 13 Nov 2010 14:09 |
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