High Charge Carrier Mobility in Two Dimensional Indium (III) Isophthalic Acid Based Frameworks

Abstract

The effect of dimensionality (1D to 2D) on charge carrier mobility have been studied thoroughly on three In(III)-isophthalate based MOFs [In-IA-1D, In-IA-2D-1 and -2]. In-IA-1D possess 1D nanotubular architecture with [(CH₃)₂NH₂]⁺. In-IA-2D-1 have 2D layers containing only [(CH₃)₂NH₂]⁺ cations. Whereas, In-IA-2D-2 have [(CH₃)₂NH₂]⁺ cations as well as solvent DMF molecule inside the crystal structure. Due to presence of the π–π stacking arrangement among the phenyl rings of IA moieties facilitates the high charge carrier mobility (4.6 × 10⁻³ cm² V⁻¹ s⁻¹ at V_G = −40 V) in In-IA-2D-2. However, In-IA-1D and In-IA-2D-1 does not show any charge carrier mobility due to absence of π–π stacking arrangement.