Kulkarni, R.D. ; Gupta, A.K. ; Agarwal, V. (2000) Issues related to nuclear radiation effects on semiconductor devices In: Proceedings of IEEE International Conference on Industrial Technology 2000 (IEEE Cat. No.00TH8482), 19-22 Jan. 2000, Goa, India.
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Official URL: http://doi.org/10.1109/ICIT.2000.854238
Related URL: http://dx.doi.org/10.1109/ICIT.2000.854238
Abstract
The nuclear radiation damage due to displacement and ionisation effects has been observed on semiconductor diodes and transistors. The devices were irradiated with gamma rays of integrated dose value of 100, 300 and 500 krads with a dose rate of 100 krads/hour. A decrease in the breakdown voltage capacity and increase in leakage current were observed for the rectifier diodes while the common emitter current gain of power transistors reduced to a low value and was found to be highly sensitive to the low dose rate values. Controlled annealing shows improvement in the post-radiation integrity of the lattice through recombination. Utilising the experimental database, the mathematical modelling of nuclear effects can predict life of the devices. Radiation hard power electronic system design approach is discussed.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Source: | Copyright of this article belongs to Institute of Electrical and Electronics Engineers. |
| ID Code: | 115341 |
| Deposited On: | 24 Mar 2021 11:23 |
| Last Modified: | 24 Mar 2021 11:23 |
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