Pradhan, Gopal K. ; Narayana, Chandrabhas ; Deb, S. K. ; Pagès, O. ; Firszt, F. ; Paszkowicz, W. (2012) Pressure induced metallization in Zn1−xBexSe ternary mixed crystals Journal of Physics: Conference Series, 377 . Article ID 012019-6 pages. ISSN 1742-6588
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Official URL: http://iopscience.iop.org/article/10.1088/1742-659...
Related URL: http://dx.doi.org/10.1088/1742-6596/377/1/012019
Abstract
We use high pressure Raman scattering to investigate the structural stability and the pressure effects on the semiconductor-metal phase transition of Zn1−xBexSe (x = 0.112, 0.16 and 0.24) mixed crystals up to about 25 GPa. We find that introduction of Be in Zn site results in an increase in the semiconductor-metal phase transition pressure as compared to pure ZnSe. We also determine the mode Gruneisen parameters (γ) and find a decrease in the ratio of the mode Gruneisen parameter (γTO/γLO) values with increasing Be content suggesting an increased covalency in the system with Be incorporation.
| Item Type: | Article |
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| Source: | Copyright of this article belongs to Institute of Physics. |
| ID Code: | 113740 |
| Deposited On: | 27 Apr 2018 07:14 |
| Last Modified: | 27 Apr 2018 07:14 |
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